I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to le.
I DC-to-DC conversion I MOSFET gate driving I Motor control I Charging circuits I Power switches (e.g. motors, fans) I T.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: 2PD2150.
1.2 Features
I Low collector-emitter saturation voltage VCEsat I Hig.
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